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|Title:||Equipment design and process control of critical dimensions in lithography|
|Citation:||Ngo, Y.S.,Yang, G.,Putra, A.S.,Ang, K.T.,Tay, A.,Fang, Z.P. (2010). Equipment design and process control of critical dimensions in lithography. 2010 8th IEEE International Conference on Control and Automation, ICCA 2010 : 1572-1577. ScholarBank@NUS Repository. https://doi.org/10.1109/ICCA.2010.5524378|
|Abstract:||The lithography sequence is the most critical step in the fabrication of nanostructures for integrated circuit manufacturing. In this paper, we present the development of in-situ real-time sensors and actuating sytems for real-time monitoring and control of the single most critical parameter in the lithography sequence: the critical dimension (CD) or linewidth of the structures. The use of an in-situ non-destructive technique also ensures that wafer contamination during production is minimal. A spectroscopic ellipsometer is developed to monitor these nanostructures during their formation in-situ and in real-time. Coupled with the development of a programmable multizone thermal processing system, we demonstrated that these nanostructures can be manipulated in real-time during processing. This is an signifcant improvement to current monitoring and control techniques which are typically run-to-run or wafer-to-wafer; features are measured off-line and equipment setpoints adjusted for the next batch of wafers. © 2010 IEEE.|
|Source Title:||2010 8th IEEE International Conference on Control and Automation, ICCA 2010|
|Appears in Collections:||Staff Publications|
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