Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/70187
Title: Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals
Authors: Samanta, S.K. 
Singh, P.K.
Yoo, W.J. 
Samudra, G. 
Yeo, Y.-C. 
Bera, L.K.
Balasubramanian, N.
Issue Date: 2005
Source: Samanta, S.K.,Singh, P.K.,Yoo, W.J.,Samudra, G.,Yeo, Y.-C.,Bera, L.K.,Balasubramanian, N. (2005). Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 170-173. ScholarBank@NUS Repository.
Abstract: This paper for the first time, reports the memory enhancement characteristics and good retention with feasibility of two-bit operation of small scale devices with gate length down to 100 nm, using double layer W nanocrystals embedded in HfAlO for the next generation memory application. Double layer device shows increasing memory window with scaling which will be extremely beneficial. © 2005 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/70187
ISBN: 078039268X
ISSN: 01631918
Appears in Collections:Staff Publications

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