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|Title:||Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals|
|Authors:||Samanta, S.K. |
|Citation:||Samanta, S.K.,Singh, P.K.,Yoo, W.J.,Samudra, G.,Yeo, Y.-C.,Bera, L.K.,Balasubramanian, N. (2005). Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 170-173. ScholarBank@NUS Repository.|
|Abstract:||This paper for the first time, reports the memory enhancement characteristics and good retention with feasibility of two-bit operation of small scale devices with gate length down to 100 nm, using double layer W nanocrystals embedded in HfAlO for the next generation memory application. Double layer device shows increasing memory window with scaling which will be extremely beneficial. © 2005 IEEE.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
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