Please use this identifier to cite or link to this item:
|Title:||Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates|
Magnetic properties of interfaces
|Source:||Guo, Z.B., Li, K.B., Han, G.C., Qiu, J.J., Zheng, Y.K., Liu, Z.Y., Wu, Y.H. (2004-05). Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates. Journal of Magnetism and Magnetic Materials 272-276 (III) : 1885-1886. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2003.12.767|
|Abstract:||The pattern of dots with height about 1.2nm is formed on Si substrates by ion sputtering. Top, bottom spin valves, and bottom spin valves with a nano-oxide layer are fabricated on both non-ion sputtered and ion sputtered Si substrates. Magnetoresistance ratio increase around 10% has been achieved in the spin valves on the ion sputtered substrates. © 2003 Elsevier B.V. All rights reserved.|
|Source Title:||Journal of Magnetism and Magnetic Materials|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.