Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jmmm.2003.12.767
Title: Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates
Authors: Guo, Z.B.
Li, K.B.
Han, G.C. 
Qiu, J.J.
Zheng, Y.K.
Liu, Z.Y.
Wu, Y.H. 
Keywords: Giant magnetoresistance
Hysteresis loops
Magnetic properties of interfaces
Issue Date: May-2004
Source: Guo, Z.B., Li, K.B., Han, G.C., Qiu, J.J., Zheng, Y.K., Liu, Z.Y., Wu, Y.H. (2004-05). Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates. Journal of Magnetism and Magnetic Materials 272-276 (III) : 1885-1886. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2003.12.767
Abstract: The pattern of dots with height about 1.2nm is formed on Si substrates by ion sputtering. Top, bottom spin valves, and bottom spin valves with a nano-oxide layer are fabricated on both non-ion sputtered and ion sputtered Si substrates. Magnetoresistance ratio increase around 10% has been achieved in the spin valves on the ion sputtered substrates. © 2003 Elsevier B.V. All rights reserved.
Source Title: Journal of Magnetism and Magnetic Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/70186
ISSN: 03048853
DOI: 10.1016/j.jmmm.2003.12.767
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

28
checked on Jan 21, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.