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Title: Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates
Authors: Guo, Z.B.
Li, K.B.
Han, G.C. 
Qiu, J.J.
Zheng, Y.K.
Liu, Z.Y.
Wu, Y.H. 
Keywords: Giant magnetoresistance
Hysteresis loops
Magnetic properties of interfaces
Issue Date: May-2004
Citation: Guo, Z.B., Li, K.B., Han, G.C., Qiu, J.J., Zheng, Y.K., Liu, Z.Y., Wu, Y.H. (2004-05). Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates. Journal of Magnetism and Magnetic Materials 272-276 (III) : 1885-1886. ScholarBank@NUS Repository.
Abstract: The pattern of dots with height about 1.2nm is formed on Si substrates by ion sputtering. Top, bottom spin valves, and bottom spin valves with a nano-oxide layer are fabricated on both non-ion sputtered and ion sputtered Si substrates. Magnetoresistance ratio increase around 10% has been achieved in the spin valves on the ion sputtered substrates. © 2003 Elsevier B.V. All rights reserved.
Source Title: Journal of Magnetism and Magnetic Materials
ISSN: 03048853
DOI: 10.1016/j.jmmm.2003.12.767
Appears in Collections:Staff Publications

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