Please use this identifier to cite or link to this item: https://doi.org/10.1109/COMMAD.2008.4802143
Title: Elimination of hydrogenation-induced contact degradation of evaporated poly-Si thin-film solar cells on glass
Authors: Shi, L.
Kunz, O.
Aberle, A. 
Keywords: Contact resistance
Hydrogenation
Ohmic contacts
Polycrystalline silicon
Solar cells
Thin films
Issue Date: 2008
Source: Shi, L.,Kunz, O.,Aberle, A. (2008). Elimination of hydrogenation-induced contact degradation of evaporated poly-Si thin-film solar cells on glass. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD : 267-270. ScholarBank@NUS Repository. https://doi.org/10.1109/COMMAD.2008.4802143
Abstract: Severe Al/poly-Si contact degradation is observed after metallising p-type BSF(back surface field)layers of poly-Si thin-film diodes on glass which received a hydrogen passivation treatment prior to contact formation. The degradation is confirmed by comparative dark I-V measurements on the hydrogenated and non-hydrogenated samples. Two methods-thermal annealing and Si etching using coloured HF-are employed to address this problem induced by hydrogenation processing. Both methods improve the contact properties between p-type poly Si and evaporated Al significantly and lead to good ohmic contacts with low specific contact resistance. In contrast, it is found that contacts between Al and n-type BSF layers do not degrade after hydrogenation but when the sample is treated by either of the above methods. The possible reasons are discussed. © 2008 IEEE.
Source Title: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
URI: http://scholarbank.nus.edu.sg/handle/10635/70155
ISBN: 9781424427178
DOI: 10.1109/COMMAD.2008.4802143
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