Please use this identifier to cite or link to this item: https://doi.org/10.1109/EDAPS.2012.6469384
Title: Electrical characterization of through-silicon vias (TSV) with different physical configurations
Authors: Zhao, W.-S.
Guo, Y.-X. 
Yin, W.-Y.
Issue Date: 2012
Source: Zhao, W.-S.,Guo, Y.-X.,Yin, W.-Y. (2012). Electrical characterization of through-silicon vias (TSV) with different physical configurations. 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012 : 173-176. ScholarBank@NUS Repository. https://doi.org/10.1109/EDAPS.2012.6469384
Abstract: Through-silicon vias (TSV) have been proposed to enable the 'More-than-Moore' technology. In this paper, comparative studies on TSVs with different configurations are carried out based on their equivalent circuit model, with their electrical performance variations characterized together with coupling capacitance and conductance treated appropriately. © 2012 IEEE.
Source Title: 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012
URI: http://scholarbank.nus.edu.sg/handle/10635/70125
ISBN: 9781467314435
DOI: 10.1109/EDAPS.2012.6469384
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