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|Title:||Electrical characterization of through-silicon vias (TSV) with different physical configurations|
|Citation:||Zhao, W.-S.,Guo, Y.-X.,Yin, W.-Y. (2012). Electrical characterization of through-silicon vias (TSV) with different physical configurations. 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012 : 173-176. ScholarBank@NUS Repository. https://doi.org/10.1109/EDAPS.2012.6469384|
|Abstract:||Through-silicon vias (TSV) have been proposed to enable the 'More-than-Moore' technology. In this paper, comparative studies on TSVs with different configurations are carried out based on their equivalent circuit model, with their electrical performance variations characterized together with coupling capacitance and conductance treated appropriately. © 2012 IEEE.|
|Source Title:||2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012|
|Appears in Collections:||Staff Publications|
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