Please use this identifier to cite or link to this item:
|Title:||Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts|
Schottky barrier height (SBH)
Thermionic emission model
|Source:||Jin, L.J., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z. (2006-05-10). Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts. Thin Solid Films 504 (1-2) : 149-152. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.063|
|Abstract:||The current versus voltage (I-V) characteristics of Ni(Pt or Pd)Si/n-Si Schottky contacts annealed at 400 and 500 °C showed that the Schottky barrier height (SBH) of the contact increased from 0.67 to 0.80 eV with an addition of 10 at.% Pt into the Ni alloy film. On the other hand, both 5 and 10 at.% Pd resulted in the same amount of increase in the SBH. The forward-biased I-V characteristics of Ni alloy/Si contacts carried out at 93 to 300 K showed that at higher measured temperature (> 253 K), or at low measured temperature (< 253 K) but at higher bias (> 0.5 V), it can be modeled using the thermionic emission model with the SBH decreased and ideality factor increased with decreasing temperature. Excess current was observed when measured at T < 253 K and lower bias (< 0.5 V) which may be due to the local inhomogeneity of SBH. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 6, 2017
WEB OF SCIENCETM
checked on Nov 20, 2017
checked on Dec 10, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.