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|Title:||Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts|
Schottky barrier height (SBH)
Thermionic emission model
|Citation:||Jin, L.J., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z. (2006-05-10). Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts. Thin Solid Films 504 (1-2) : 149-152. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.063|
|Abstract:||The current versus voltage (I-V) characteristics of Ni(Pt or Pd)Si/n-Si Schottky contacts annealed at 400 and 500 °C showed that the Schottky barrier height (SBH) of the contact increased from 0.67 to 0.80 eV with an addition of 10 at.% Pt into the Ni alloy film. On the other hand, both 5 and 10 at.% Pd resulted in the same amount of increase in the SBH. The forward-biased I-V characteristics of Ni alloy/Si contacts carried out at 93 to 300 K showed that at higher measured temperature (> 253 K), or at low measured temperature (< 253 K) but at higher bias (> 0.5 V), it can be modeled using the thermionic emission model with the SBH decreased and ideality factor increased with decreasing temperature. Excess current was observed when measured at T < 253 K and lower bias (< 0.5 V) which may be due to the local inhomogeneity of SBH. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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