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|Title:||Electrical characterization of a trilayer germanium nanocrystal memory device|
|Keywords:||Capacitance-voltage ( C-V )|
|Citation:||Ho, V., Tay, M.S., Moey, C.H., Teo, L.W., Choi, W.K., Chim, W.K., Heng, C.L., Lei, Y. (2003-04). Electrical characterization of a trilayer germanium nanocrystal memory device. Microelectronic Engineering 66 (1-4) : 33-38. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-9317(03)00021-2|
|Abstract:||In this paper, we report the effects of the thickness of the middle layer and the rapid thermal oxide (RTO) layer on the charge storage capability of the trilayer devices. The capacitance versus voltage (C-V) measurements showed that devices with a thinner middle layer and the same thickness for the RTO layer have better charge storage capability (i.e., larger C-V hysteresis). For devices with the same middle layer thickness, a larger C-V hysteresis was observed from devices with a thinner RTO layer. © 2003 Elsevier Science B.V. All rights reserved.|
|Source Title:||Microelectronic Engineering|
|Appears in Collections:||Staff Publications|
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