Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0167-9317(03)00021-2
Title: Electrical characterization of a trilayer germanium nanocrystal memory device
Authors: Ho, V.
Tay, M.S.
Moey, C.H.
Teo, L.W.
Choi, W.K. 
Chim, W.K. 
Heng, C.L.
Lei, Y.
Keywords: Capacitance-voltage ( C-V )
Germanium
Memory
Nanocrystal
Issue Date: Apr-2003
Source: Ho, V., Tay, M.S., Moey, C.H., Teo, L.W., Choi, W.K., Chim, W.K., Heng, C.L., Lei, Y. (2003-04). Electrical characterization of a trilayer germanium nanocrystal memory device. Microelectronic Engineering 66 (1-4) : 33-38. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-9317(03)00021-2
Abstract: In this paper, we report the effects of the thickness of the middle layer and the rapid thermal oxide (RTO) layer on the charge storage capability of the trilayer devices. The capacitance versus voltage (C-V) measurements showed that devices with a thinner middle layer and the same thickness for the RTO layer have better charge storage capability (i.e., larger C-V hysteresis). For devices with the same middle layer thickness, a larger C-V hysteresis was observed from devices with a thinner RTO layer. © 2003 Elsevier Science B.V. All rights reserved.
Source Title: Microelectronic Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/70123
ISSN: 01679317
DOI: 10.1016/S0167-9317(03)00021-2
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

10
checked on Dec 6, 2017

WEB OF SCIENCETM
Citations

10
checked on Nov 19, 2017

Page view(s)

17
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.