Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2709420
Title: Effects of Co80 Fe20 insertion layer on perpendicular exchange bias characteristics in [PdCo]5 FeMn bilayered thin films
Authors: Lin, L.
Kim, S. 
Bae, S. 
Joo, H.W.
Hwang, D.G.
Lee, S.S.
Issue Date: 2007
Source: Lin, L., Kim, S., Bae, S., Joo, H.W., Hwang, D.G., Lee, S.S. (2007). Effects of Co80 Fe20 insertion layer on perpendicular exchange bias characteristics in [PdCo]5 FeMn bilayered thin films. Journal of Applied Physics 101 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2709420
Abstract: Effects of Co80 Fe20 insertion layer on the perpendicular exchange bias characteristics in [PdCo]5 FeMn bilayered thin films have been investigated by changing the Co80 Fe20 insertion layer thickness. Hysteresis loops for both in-plane and perpendicular to the film plane were measured by using a vibrating sample magnetometer and an extraordinary Hall effect. It was found that the thin Co80 Fe20 insertion layer was very effective in improving the perpendicular exchange bias characteristics in [PdCo]5 FeMn bilayered thin films. By increasing Co80 Fe20 insertion layer thickness from 0 to 1.24 nm, the exchange bias field was significantly increased up to 332 Oe and then decreased down to 60 Oe, while the pinned coercivity was monotonically decreased. The effective magnetic anisotropy was kept at positive up to 0.6 nm thick of Co80 Fe20 insertion layer. It was experimentally confirmed that the perpendicular exchange bias field was promisingly larger than the pinned coercivity when the Co80 Fe20 insertion layer had the thickness in the range between 0.37 and 0.56 nm. The significant increase of the perpendicular exchange bias field and the reduction of pinned coercivity after inserting Co80 Fe20 thin films are thought to be attributed to the modification of interfacial roughness between the FeMn and adjacent top Co layers and the stress-induced change of perpendicular magnetization direction of the top Co layer, which is adjacent to FeMn layer. © 2007 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/70094
ISSN: 00218979
DOI: 10.1063/1.2709420
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on Dec 14, 2017

WEB OF SCIENCETM
Citations

4
checked on Nov 19, 2017

Page view(s)

28
checked on Dec 17, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.