Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPGC.2008.4781311
Title: Effect of nitrogen on indium segregation in GaInNAs/GaAs quantum wells
Authors: Dixit, V.
Liu, H.F.
Xiang, N. 
Issue Date: 2008
Source: Dixit, V.,Liu, H.F.,Xiang, N. (2008). Effect of nitrogen on indium segregation in GaInNAs/GaAs quantum wells. 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IPGC.2008.4781311
Abstract: A kinetic model has been developed to study the effect of nitrogen on indium segregation for GaInNAs/GaAs quantum wells. Our results suggest that nitrogen tends to enhance the indium-gallium exchange process. The incorporation of nitrogen is found to increases the segregation length up to a maximum value, which decreases with further increase in nitrogen concentration.
Source Title: 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
URI: http://scholarbank.nus.edu.sg/handle/10635/70082
ISBN: 9781424429059
DOI: 10.1109/IPGC.2008.4781311
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