Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0023ecst
Title: Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor
Authors: Liu, B.
Gong, X.
Zhan, C.
Han, G. 
Daval, N.
Veytizou, C.
Delprat, D.
Nguyen, B.-Y.
Yeo, Y.-C. 
Issue Date: 2012
Source: Liu, B., Gong, X., Zhan, C., Han, G., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C. (2012). Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor. ECS Transactions 50 (9) : 23-30. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0023ecst
Abstract: We demonstrate the integration of high performance p-channel Germanium MuGFETs on GeOI substrate using a simple sub-400 C process module. Ge fin doping effects on performance of Ge MuGFET are discussed for further device optimization on GeOI substrate. It is found that higher fin doping leads to better short channel control of Ge MuGFETs on GeOI but degrades the onstate current and transconductance. A record high on-state current for Ge MuGFETs is reported in this work. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/70074
ISBN: 9781607683575
ISSN: 19385862
DOI: 10.1149/05009.0023ecst
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