Please use this identifier to cite or link to this item:
|Title:||Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor|
|Citation:||Liu, B., Gong, X., Zhan, C., Han, G., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C. (2012). Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor. ECS Transactions 50 (9) : 23-30. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0023ecst|
|Abstract:||We demonstrate the integration of high performance p-channel Germanium MuGFETs on GeOI substrate using a simple sub-400 C process module. Ge fin doping effects on performance of Ge MuGFET are discussed for further device optimization on GeOI substrate. It is found that higher fin doping leads to better short channel control of Ge MuGFETs on GeOI but degrades the onstate current and transconductance. A record high on-state current for Ge MuGFETs is reported in this work. © The Electrochemical Society.|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.