Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2008.4588168
Title: Effect of bonding pressure on the bond strengths of low temperature Ag-In bonds
Authors: Made, R.I.
Gan, C.L.
Lee, C. 
Yan, L.
Yu, A.
Yoon, S.W.
Issue Date: 2008
Source: Made, R.I.,Gan, C.L.,Lee, C.,Yan, L.,Yu, A.,Yoon, S.W. (2008). Effect of bonding pressure on the bond strengths of low temperature Ag-In bonds. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2008.4588168
Abstract: Bonding of multiple indium-silver intermediate layers facilitates precise control of the formed alloy composition and the joint thickness. The bonding temperature and post-bonding re-melting temperature can thus be easily designed by controlling the multilayer materials and structure thicknesses. However, joining different materials involves the formation of intermetallics, which is known to be brittle. In this paper, In-Ag intermetallic phase formation under different applied pressure is studied.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/70067
ISBN: 1424420393
DOI: 10.1109/IPFA.2008.4588168
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