Please use this identifier to cite or link to this item:
Title: Doped microcrystalline silicon layers for solar cells by 13.56 MHz plasma-enhanced chemical vapour deposition
Authors: Long, J. 
Yin, Y.
Sian, S.Y.R.
Ren, Z.
Wang, J.
Vayalakkara, P.
Venkataraj, S.
Aberle, A.G. 
Keywords: Crystallinity
Doped microcrystalline silicon
Silicon thin-film solar cells
Thin films
Issue Date: 2012
Citation: Long, J., Yin, Y., Sian, S.Y.R., Ren, Z., Wang, J., Vayalakkara, P., Venkataraj, S., Aberle, A.G. (2012). Doped microcrystalline silicon layers for solar cells by 13.56 MHz plasma-enhanced chemical vapour deposition. Energy Procedia 15 : 240-247. ScholarBank@NUS Repository.
Abstract: Doped hydrogenated microcrystalline silicon thin films play a critical role in multi-junction thin-film silicon solar cells, because their crystallinity has a large influence on the properties of intrinsic microcrystalline silicon absorber layers grown on them. The doping efficiency of the doped layers depends strongly on their crystallinity and hence a high-crystallinity doped layer is desired. In this study, highly crystalline doped microcrystalline silicon films are formed on 300 mm × 400 mm glass substrates using a conventional parallel-plate PECVD reactor operated at 13.56 MHz. Raman spectroscopy is used to analyse the crystallinity of the films. The conductivity of the films is measured using the co-planar electrode method. The effects of the deposition parameters on the Raman crystallinity and conductivity of the doped films are investigated. The RF power is found to play a key role for achieving a high crystallinity in the doped layers, whereby a high crystallinity can only be obtained within a narrow RF power range. The influence of the RF power on the lateral thickness uniformity of the deposited films is also examined. It is found that the RF power has a strong influence on the lateral uniformity of the deposited films, with intermediate power giving the best thickness uniformity. © 2011 Published by Elsevier Ltd.
Source Title: Energy Procedia
ISSN: 18766102
DOI: 10.1016/j.egypro.2012.02.028
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Feb 21, 2019


checked on Feb 5, 2019

Page view(s)

checked on Sep 29, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.