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|Title:||Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack|
|Authors:||Ya Lim, P.S.|
|Source:||Ya Lim, P.S., Chi, D.Z., Lo, G.Q., Yeo, Y.C. (2009). Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack. ECS Transactions 25 (7) : 405-410. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3203977|
|Abstract:||Dopant Segregated Schottky (DSS) Source/Drain (S/D) for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack are demonstrated for the first time. The MOSFETs were fabricated using a CMOS-compatible process flow and 200 mm Ge-on-Si substrates. Dopant segregation induced by nickel germanide formation in the S/D was achieved using low process temperatures up to 400 °C. © The Electrochemical Society.|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
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