Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3203977
Title: Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack
Authors: Ya Lim, P.S.
Chi, D.Z.
Lo, G.Q.
Yeo, Y.C. 
Issue Date: 2009
Source: Ya Lim, P.S., Chi, D.Z., Lo, G.Q., Yeo, Y.C. (2009). Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack. ECS Transactions 25 (7) : 405-410. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3203977
Abstract: Dopant Segregated Schottky (DSS) Source/Drain (S/D) for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack are demonstrated for the first time. The MOSFETs were fabricated using a CMOS-compatible process flow and 200 mm Ge-on-Si substrates. Dopant segregation induced by nickel germanide formation in the S/D was achieved using low process temperatures up to 400 °C. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/70007
ISBN: 9781566777445
ISSN: 19385862
DOI: 10.1149/1.3203977
Appears in Collections:Staff Publications

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