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|Title:||Development and characterization of high-k gate stack for Ge MOSFETs|
|Source:||Xie, R.,Zhu, C. (2009). Development and characterization of high-k gate stack for Ge MOSFETs. ECS Transactions 19 (2) : 537-561. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3122115|
|Abstract:||Recent developed high-permitivity (high-k) materials provide another opportunity to germanium (Ge) as a channel material in metal-oxide-semiconductor field-effect transistor applications. In this paper, developments of high-k/Ge gate stack have been reviewed. Various interface engineering processes including surface passivation techniques and post-gate treatments have been discussed. Physical and electrical characterizations have been made to evaluate the performance of interface engineered Ge MOS devices. © The Electrochemical Society.|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
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