Please use this identifier to cite or link to this item:
|Title:||Determination of the local electric field strength near electric breakdown|
|Citation:||Geinzer, T.,Heiderhoff, R.,Phang, J.C.H.,Balk, L.J. (2010). Determination of the local electric field strength near electric breakdown. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2010.5531989|
|Abstract:||For a detailed understanding of near electric breakdown a semiconductor device is analyzed by complementary Optical Beam Induced Current and energy-dispersive Photon Emission Microscopy. The potential and limit as well as the physical background of both techniques for the determination of the local electric field strength are discussed in detail. © 2010 IEEE.|
|Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 16, 2019
checked on Jan 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.