Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2010.5531989
Title: Determination of the local electric field strength near electric breakdown
Authors: Geinzer, T.
Heiderhoff, R.
Phang, J.C.H. 
Balk, L.J.
Issue Date: 2010
Source: Geinzer, T.,Heiderhoff, R.,Phang, J.C.H.,Balk, L.J. (2010). Determination of the local electric field strength near electric breakdown. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2010.5531989
Abstract: For a detailed understanding of near electric breakdown a semiconductor device is analyzed by complementary Optical Beam Induced Current and energy-dispersive Photon Emission Microscopy. The potential and limit as well as the physical background of both techniques for the determination of the local electric field strength are discussed in detail. © 2010 IEEE.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/69898
ISBN: 9781424455973
DOI: 10.1109/IPFA.2010.5531989
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