Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2006.251053
Title: Detectivity optimization of ingaas photon emission microscope systems
Authors: Tan, S.L.
Yim, K.H.
Chan, D.S.H. 
Phang, J.C.H. 
Zhou, Y.
Balk, L.J.
Chua, C.M.
Koh, L.S.
Issue Date: 2006
Source: Tan, S.L.,Yim, K.H.,Chan, D.S.H.,Phang, J.C.H.,Zhou, Y.,Balk, L.J.,Chua, C.M.,Koh, L.S. (2006). Detectivity optimization of ingaas photon emission microscope systems. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 315-319. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2006.251053
Abstract: Although Photon Emission Microscope (PEM) systems are widely used in integrated circuit failure analysis, there is no known quantitative baseline to assess and compare the overall sensitivity performance of PEM systems. This paper describes a method to quantify the overall sensitivity of PEM systems based on spectral detectivity measurements. It has been applied to HgCdTe (MCT) and InGaAs PEM systems. It is also applied to an InGaAs PEM system to quantify the change in the detectivity of the InGaAs PEM system as the temperature of the detector changes. The method is also used to compare the signal to noise ratio of an emission image by normal time integration with digital integration where many frames of an emission image is added up to produce a single emission image. © 2006 IEEE.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/69893
ISBN: 1424402069
DOI: 10.1109/IPFA.2006.251053
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