Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/69873
Title: Design of superjunction power MOSFET devices using the gradient oxide-bypassed structure
Authors: Chen, Y.
Liang, Y.C. 
Samudra, G.S. 
Keywords: Gradient oxide-bypassed
Oxide-bypassed
Power MOSFET devices
Superjunction
Issue Date: 2005
Source: Chen, Y.,Liang, Y.C.,Samudra, G.S. (2005). Design of superjunction power MOSFET devices using the gradient oxide-bypassed structure. Proceedings of the International Conference on Power Electronics and Drive Systems 1 : 676-680. ScholarBank@NUS Repository.
Abstract: Superjunction (SJ) and other concepts have been proposed to overcome ideal silicon MOSFET limit and to lower the on-state resistance without sacrificing the breakdown rating. The gradient oxide-bypassed structure (GOB) is one such novel structure, in which a slanted oxide layer along with a poly contact is used to replace the p-column of conventional superjunction structure. This provides modulation of the drift-region electric field and minimises the process complexity in precise charge matching as faced by the SJ structure. In this paper, the principle of operation, theoretical analysis and fabrication issues of GOB devices are discussed. The closed-form derivations of GOB on-state and breakdown performance are also presented. The derivations were verified by 2D numerical device simulator MEDICI. The performance sensitivity on the slope of sidewall oxide is also discussed in this paper. Based on the overall analyses, a design for the GOB device is proposed for the first time. Using this design, one can achieve desirable breakdown voltage and specific on state resistance characteristics with good process tolerance. © 2005 IEEE.
Source Title: Proceedings of the International Conference on Power Electronics and Drive Systems
URI: http://scholarbank.nus.edu.sg/handle/10635/69873
ISBN: 0780392965
Appears in Collections:Staff Publications

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