Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3587004
Title: Dependence of substrate orientation and etching conditions on the formation of Si nanowires
Authors: Tan, L.T.
Huang, M.H.
Chong, T.S.
Ong, C.S.
Myo, T.S.
Wee, Q.
Soh, C.B.
Chua, S.J. 
Keywords: electroless etching
Nanowire
silicon
Issue Date: 2011
Source: Tan, L.T., Huang, M.H., Chong, T.S., Ong, C.S., Myo, T.S., Wee, Q., Soh, C.B., Chua, S.J. (2011). Dependence of substrate orientation and etching conditions on the formation of Si nanowires. AIP Conference Proceedings 1341 : 292-295. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3587004
Abstract: In this paper, an electroless etching using a mixed solution of hydrofluoric acid and silver nitrite on (100) and (111) silicon substrates was conducted which led to the formation of well-aligned nanowire arrays. In (100) silicon substrate, the density of nanowires networks are much wider apart than that in (111) Si substrate. In addition, the length of the nanowires in (100) Si substrate is almost two times longer than that on (111) Si substrate. It is possibly due to the fact of the orientation where the atoms are much closer packed together in (111), indicating that the process may require more energy to etch deeper and wider. It is also observed the length of SiNWs has increased when the etching temperature increases from 25°C to 50°C. Similar behavior is also noted as the hydrofluoric acid molar concentration increases from 1M to 5 M. © 2011 American Institute of Physics.
Source Title: AIP Conference Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/69808
ISBN: 9780735408975
ISSN: 0094243X
DOI: 10.1063/1.3587004
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