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|Title:||Dependence of nitrogen incorporation of GaNAs alloys to growth conditions|
|Source:||Sentosa, D.,Xiaohong, T.,Jin, C.S. (2004). Dependence of nitrogen incorporation of GaNAs alloys to growth conditions. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 3 : 2345-2348. ScholarBank@NUS Repository.|
|Abstract:||The influence of growth temperature, reactor pressure, and N/V ratio on nitrogen composition of MOCVD-grown GaNAs epilayers was studied. With same growth temperature and N/V ratio, reactor pressure of 20 mbar increases nitrogen composition of GaNAs samples by almost 30% compared to samples grown with reactor pressure of 60 and 100 mbar. The highest nitrogen content achieved of GaNAs alloy is 0.0235 with N/V ratio of 0.805 and reactor pressure of 20 mbar. By studying the nitrogen composition, reactor pressure of 20 mbar enhances nitrogen content of GaNAs alloys. © 2004 IEEE.|
|Source Title:||International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT|
|Appears in Collections:||Staff Publications|
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