Dependence of nitrogen incorporation of GaNAs alloys to growth conditions

Abstract

The influence of growth temperature, reactor pressure, and N/V ratio on nitrogen composition of MOCVD-grown GaNAs epilayers was studied. With same growth temperature and N/V ratio, reactor pressure of 20 mbar increases nitrogen composition of GaNAs samples by almost 30% compared to samples grown with reactor pressure of 60 and 100 mbar. The highest nitrogen content achieved of GaNAs alloy is 0.0235 with N/V ratio of 0.805 and reactor pressure of 20 mbar. By studying the nitrogen composition, reactor pressure of 20 mbar enhances nitrogen content of GaNAs alloys. © 2004 IEEE.