Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2828617
DC FieldValue
dc.titleCurrent-perpendicular-to-plane giant magnetoresistance in half-metallic pseudo-spin-valve structures
dc.contributor.authorTripathy, D.
dc.contributor.authorAdeyeye, A.O.
dc.date.accessioned2014-06-19T03:04:28Z
dc.date.available2014-06-19T03:04:28Z
dc.date.issued2008
dc.identifier.citationTripathy, D., Adeyeye, A.O. (2008). Current-perpendicular-to-plane giant magnetoresistance in half-metallic pseudo-spin-valve structures. Journal of Applied Physics 103 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2828617
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69771
dc.description.abstractWe have investigated the giant magnetoresistance (GMR) effect in Fe3 O4 Cu Ni80 Fe20 pseudo-spin-valve (PSV) structures for the current-perpendicular-to- plane (CPP) configuration. We observed drastic changes in the CPP GMR as the thickness of the Cu spacer layer, tCu, was varied. The GMR ratio decreases monotonically with increasing tCu, in good agreement with the Valet-Fert model in the long spin diffusion length limit. It was also observed that for a fixed tCu, GMR ratio increases with increasing Fe3 O4 layer thickness due to enhanced contributions from bulk scattering to the overall spin dependent scattering in the PSV structure. The CPP GMR ratio has strong temperature dependence and decreases monotonically with increasing temperature. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2828617
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2828617
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume103
dc.description.issue7
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000255043200462
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