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https://doi.org/10.1109/RELPHY.2008.4559012
| Title: | Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques | Authors: | Liu, Z.Y. Huang, D. Liu, W.J. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Li, M.-F. |
Issue Date: | 2008 | Citation: | Liu, Z.Y., Huang, D., Liu, W.J., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F. (2008). Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques. IEEE International Reliability Physics Symposium Proceedings : 733-734. ScholarBank@NUS Repository. https://doi.org/10.1109/RELPHY.2008.4559012 | Source Title: | IEEE International Reliability Physics Symposium Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/69676 | ISBN: | 9781424420506 | ISSN: | 15417026 | DOI: | 10.1109/RELPHY.2008.4559012 |
| Appears in Collections: | Staff Publications |
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