Please use this identifier to cite or link to this item: https://doi.org/10.1109/RELPHY.2008.4559012
Title: Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques
Authors: Liu, Z.Y.
Huang, D.
Liu, W.J.
Liao, C.C.
Zhang, L.F.
Gan, Z.H.
Wong, W.
Li, M.-F. 
Issue Date: 2008
Citation: Liu, Z.Y., Huang, D., Liu, W.J., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F. (2008). Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques. IEEE International Reliability Physics Symposium Proceedings : 733-734. ScholarBank@NUS Repository. https://doi.org/10.1109/RELPHY.2008.4559012
Source Title: IEEE International Reliability Physics Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/69676
ISBN: 9781424420506
ISSN: 15417026
DOI: 10.1109/RELPHY.2008.4559012
Appears in Collections:Staff Publications

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