Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/69649
DC Field | Value | |
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dc.title | Comparative study of optical properties of nanoporous GaN prepared by uv-assisted electrochemical and electroless etching | |
dc.contributor.author | Vajpeyi, A.P. | |
dc.contributor.author | Tripathy, S. | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Arokiaraj, J. | |
dc.contributor.author | Fitzgerald, E.A. | |
dc.date.accessioned | 2014-06-19T03:03:06Z | |
dc.date.available | 2014-06-19T03:03:06Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | Vajpeyi, A.P.,Tripathy, S.,Chua, S.J.,Arokiaraj, J.,Fitzgerald, E.A. (2005). Comparative study of optical properties of nanoporous GaN prepared by uv-assisted electrochemical and electroless etching. Proceedings - Electrochemical Society PV 2005-04 : 196-207. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/69649 | |
dc.description.abstract | In this study, nanoporous GaN films are prepared by UV-assisted electrochemical and electroless etching using HF-based electrolytes. Optical quality and morphology of these nanoporous films have been studied using micro-photoluminescence, micro-Raman scattering, and scanning electron microscopy (SEM). For nanoporous GaN films prepared by UV-assisted electrochemical etching, SEM measurements reveal an average pore size of about 85-90 nm with an average transverse dimension of 70-75 nm, whereas in the case of UV-assisted electroless etching, average pore size is about 55-60 nm with a pore depth of 0.5 μm. As compared to the starting as-grown GaN film, porous layers exhibit a substantial photoluminescence (PL) intensity enhancement with a relaxation of compressive stress. The red shifted EI phonon peak in the Raman spectra of the porous GaN films further confirms such a stress relaxation. Micro-Raman and micro-PL measurements also suggest that light extraction from such porous GaN surface is enhanced by nanopatterning. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Proceedings - Electrochemical Society | |
dc.description.volume | PV 2005-04 | |
dc.description.page | 196-207 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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