Please use this identifier to cite or link to this item: https://doi.org/10.1109/APMC.2005.1606551
Title: Comparative studies on (No)Patterned Ground Shield (PGS) RF-CMOS transformers at different temperatures
Authors: Shi, J.-L.
Yin, W.-Y.
Mao, J.
Li, L.-W. 
Issue Date: 2005
Source: Shi, J.-L.,Yin, W.-Y.,Mao, J.,Li, L.-W. (2005). Comparative studies on (No)Patterned Ground Shield (PGS) RF-CMOS transformers at different temperatures. Asia-Pacific Microwave Conference Proceedings, APMC 3 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/APMC.2005.1606551
Abstract: Extensively comparative studies are carried out on the performance of on-chip CMOS transformers in the presence and absence of patterned ground shields (PCS) at temperatures of 253 K, 298 K, 333 K, and 373 K. These transformers were fabricated using 0.18 micron CMOS processes and designed to be interleaved and center-tapped interleaved geometries, respectively, but with the same inner dimension, metal track width, track spacing and substrate properties. Based on the two-port S-parameters measured at different temperatures, all performance indicators, such as maximum available gain Gmax, Q-factor of the primary or secondary coil, power loss, and minimum noise figure of these transformers are extracted and compared with each other. © 2005 IEEE.
Source Title: Asia-Pacific Microwave Conference Proceedings, APMC
URI: http://scholarbank.nus.edu.sg/handle/10635/69647
ISBN: 078039433X
DOI: 10.1109/APMC.2005.1606551
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Dec 13, 2017

Page view(s)

20
checked on Dec 9, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.