Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2008.4734614
Title: Characteristics of NBTI in pMOSFETs with thermally and plasma nitrided gate oxides
Authors: Liu, W.J.
Liu, Z.Y.
Luo, Y.
Jiao, G.F.
Huang, X.Y.
Huang, D.
Liao, C.C.
Zhang, L.F.
Gan, Z.H.
Wong, W.
Li, M.-F. 
Issue Date: 2008
Source: Liu, W.J., Liu, Z.Y., Luo, Y., Jiao, G.F., Huang, X.Y., Huang, D., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F. (2008). Characteristics of NBTI in pMOSFETs with thermally and plasma nitrided gate oxides. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT : 648-650. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2008.4734614
Abstract: Negative bias temperature instability in pMOSFETs with thermally and plasma nitrided oxides is investigated using quasi-DC Id-Vg (slow Id-Vg) and on-the-fiy interface trap (OFIT) measurement methods. By comparing the OFIT results with those observed from Id-Vg measurements, we found that the threshold voltage shift measured by slow Id-Vg is mainly due to the interface trap since the oxide charge is essentially detrapped during the measurement delay. Quantitatively, the interface trap density measured by OFIT method is higher than that by slow Id-Vg measurement, since the latter measurement is subjected to the recovery effect. For the thermally and plasma nitrided oxides, we found the interface trap density is higher for thermally nitride oxide. However, the power law time exponent n as stress time is the same for the pMOSFETs with both processes. © 2008 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI: http://scholarbank.nus.edu.sg/handle/10635/69581
ISBN: 9781424421855
DOI: 10.1109/ICSICT.2008.4734614
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