Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.771418
Title: CD uniformity control via real-time control of photoresist properties
Authors: Chen, M.
Fu, J. 
Ho, W.K. 
Tay, A. 
Keywords: CD control
Photoresist processing
Real-time control
Temperature control
Issue Date: 2008
Citation: Chen, M., Fu, J., Ho, W.K., Tay, A. (2008). CD uniformity control via real-time control of photoresist properties. Proceedings of SPIE - The International Society for Optical Engineering 6922 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.771418
Abstract: Critical dimension (CD) or linewidth is one the most critical variable in the lithography process with the most direct impact on the device speed and performance of integrated circuits. Photoresist thickness is one of the photoresist properties that can have an impact on the CD uniformity. Due to thin film interference, CD varies with photoresist thickness. In this paper, we present an innovative approach to control photoresist thickness in real-time during thermal processing steps in the lithography sequence to control CD. As opposed to run-to-run control where information from the previous wafer or batch is used for control of the current wafer or batch, the approach here is real-time and make use of the current wafer information for control of the current wafer CD. The experiments demonstrated that such an approach can reduce CD non-uniformity from wafer-to-wafer and within-wafer.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/69571
ISBN: 9780819471079
ISSN: 0277786X
DOI: 10.1117/12.771418
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