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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/69510
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dc.titleBipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides
dc.contributor.authorLoh, W.Y.
dc.contributor.authorCho, B.J.
dc.contributor.authorLi, M.F.
dc.date.accessioned2014-06-19T03:01:31Z
dc.date.available2014-06-19T03:01:31Z
dc.date.issued2001
dc.identifier.citationLoh, W.Y.,Cho, B.J.,Li, M.F. (2001). Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 59-62. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69510
dc.description.abstractThe quasi-breakdown mechanism (QB) of thin gate oxides is investigated under bipolar constant current stressing. It was observed that there exist two distinct stages in quasi-breakdown (QB) characterized by their electrical recoverability. In the first or recoverable stage, leakage current after QB could be recovered to the SILC level by applying proper reverse bias. In the second or unrecoverable stage however, no electrical recovery is observed. Conduction mechanisms at QB were also studied using carrier separation and DCIV techniques.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.description.page59-62
dc.identifier.isiutNOT_IN_WOS
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