Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/69510
Title: Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides
Authors: Loh, W.Y. 
Cho, B.J. 
Li, M.F. 
Issue Date: 2001
Citation: Loh, W.Y.,Cho, B.J.,Li, M.F. (2001). Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 59-62. ScholarBank@NUS Repository.
Abstract: The quasi-breakdown mechanism (QB) of thin gate oxides is investigated under bipolar constant current stressing. It was observed that there exist two distinct stages in quasi-breakdown (QB) characterized by their electrical recoverability. In the first or recoverable stage, leakage current after QB could be recovered to the SILC level by applying proper reverse bias. In the second or unrecoverable stage however, no electrical recovery is observed. Conduction mechanisms at QB were also studied using carrier separation and DCIV techniques.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/69510
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