Bandgap engineering in semiconductor quantum dots
Chia, C.K. Dong, J.R. Chua, S.J. Tripathy, S.
Chia, C.K.
Dong, J.R.
Tripathy, S.
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Abstract
Intermixing in InAs quantum dots (QDs) grown by molecular-beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques on GaAs and InP substrates have been investigated by rapid thermal annealing (RTA) and laser-irradiation techniques. In all cases, substantial energy shifts have been observed after RTA and laser annealing. A comparison between the intermixed QD and quantum well (QW) structures shows distinguished differences in photoluminescence (PL) intensity and full-width at half-maximum (FWHM). For QD structures, an increase in PL intensity and a reduction in FWHM were observed after intermixing, whereas for QW structures the FWHM increased and the PL intensity reduced after intermixing, suggesting degradation of the material quality in the QWs after intermixing. Examination of the role of the surrounding matrix in intermixing process shows that InAs QDs placed in a InGaAs QW can retain its good optical quality after high temperature annealing, as the InGaAs QW provides a foundation for the QDs to be fully desorbed in the well.
Keywords
A1. Low-dimensional structures, A3. Metalorganic chemical vapor deposition, A3. Molecular beam epitaxy, B2. Semiconducting III-V materials
Source Title
Journal of Crystal Growth
Publisher
Series/Report No.
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Date
2006-02-02
DOI
10.1016/j.jcrysgro.2005.12.050
Type
Conference Paper