Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2009.5232566
Title: Applications of scanning near-field photon emission microscopy
Authors: Isakov, D.V.
Tan, B.W.M.
Phang, J.C.H. 
Yeo, Y.C. 
Tio, A.A.B.
Zhang, Y.
Geinzer, T.
Balk, L.J.
Issue Date: 2009
Source: Isakov, D.V.,Tan, B.W.M.,Phang, J.C.H.,Yeo, Y.C.,Tio, A.A.B.,Zhang, Y.,Geinzer, T.,Balk, L.J. (2009). Applications of scanning near-field photon emission microscopy. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 631-634. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2009.5232566
Abstract: In this paper, the application of scanning near-field photon emission microscopy for imaging photon emission sites is demonstrated. Photon emissions generated by a Fin-FET test structure with one metallization layer are imaged with spatial resolution of 50 nm using scattering dialectic probe. The potential applications and limitations of the technique are discussed. ©2009 IEEE.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/69439
ISBN: 9781424439102
DOI: 10.1109/IPFA.2009.5232566
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