Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/69397
Title: Analysis of leakage mechanisms and leakage pathways in intra-level Cu interconnects
Authors: Ngwan, V.C.
Zhu, C. 
Krishnamoorthy, A.
Keywords: Interconnects
LOW-k and Copper
Issue Date: 2004
Source: Ngwan, V.C.,Zhu, C.,Krishnamoorthy, A. (2004). Analysis of leakage mechanisms and leakage pathways in intra-level Cu interconnects. Annual Proceedings - Reliability Physics (Symposium) : 571-572. ScholarBank@NUS Repository.
Abstract: Using the carrier transport modeling in intra-level Cu interconnects, we are able to distinguish the dominant leakage mechanisms: Ohmic, Poole-Frenkel and Schottky mechanisms. In addition, the probable dominant leakage pathways: bulk-induced, barrier layer-induced or their interfaces-induced pathways are deduced to explain the leakage behavior in multilayer interconnects.
Source Title: Annual Proceedings - Reliability Physics (Symposium)
URI: http://scholarbank.nus.edu.sg/handle/10635/69397
ISSN: 00999512
Appears in Collections:Staff Publications

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