Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3375592
Title: Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction
Authors: Yeo, Y.-C. 
Issue Date: 2010
Source: Yeo, Y.-C. (2010). Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction. ECS Transactions 28 (1) : 91-102. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3375592
Abstract: Contact resistance is becoming an important limiting factor for achieving high MOSFET drive current and speed in future technology nodes. In this paper, we review the technology solutions for reducing the contact resistance between a metal silicide contact and the source/drain region. Several new approaches for decreasing the electron and hole barrier heights between the source/drain region and the silicide layer in n-FET and p-FET, respectively, will be examined. Integration of these approaches in advanced device architectures will be discussed. ©The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/69243
ISBN: 9781566777919
ISSN: 19385862
DOI: 10.1149/1.3375592
Appears in Collections:Staff Publications

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