Please use this identifier to cite or link to this item: https://doi.org/10.1109/RFIT.2012.6401649
Title: A technology-independent table-based model for advanced GaN Schottky barrier diodes
Authors: Zhong, Z.
Guo, Y.-X. 
Issue Date: 2012
Source: Zhong, Z.,Guo, Y.-X. (2012). A technology-independent table-based model for advanced GaN Schottky barrier diodes. Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 : 168-170. ScholarBank@NUS Repository. https://doi.org/10.1109/RFIT.2012.6401649
Abstract: In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmission (WPT) applications. This novel table-based model can be simply built based on the measured S-parameters and I-V characteristics of these GaN diodes. In contrast with many complicated traditional models, this technology-independent modeling method includes no ambiguous curve fitting and de-embedding processes. Furthermore, this large-signal model is theoretically suitable for all kinds of diodes and could be easily imported into the computer-aided design (CAD) software. To verify its accuracy, measured and modeled results of different kinds of GaN diodes are compared and excellent agreement has been obtained. © 2012 IEEE.
Source Title: Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
URI: http://scholarbank.nus.edu.sg/handle/10635/69104
ISBN: 9781467323048
DOI: 10.1109/RFIT.2012.6401649
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