Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2010.2044979
Title: A self-consistent SDD-NEGF approach for modelling magnetic tunnel junctions
Authors: Siu, Z.B.
Jalil, M.B.A. 
Tan, S.G. 
Wang, J.-S. 
Keywords: Magnetic tunnel junctions
Non-equilibrium Green's function
Spin diffusion drift
Issue Date: Jun-2010
Source: Siu, Z.B., Jalil, M.B.A., Tan, S.G., Wang, J.-S. (2010-06). A self-consistent SDD-NEGF approach for modelling magnetic tunnel junctions. IEEE Transactions on Magnetics 46 (6) : 1591-1594. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2010.2044979
Abstract: Most contemporary work on magnetic tunnel junctions either consider ballistic quantum transport across the tunneling barrer, for instance via the Non Equilibrium Green's Function (NEGF) formalism, or treat the tunneling region as a lump resistance connected to bulk metallic leads in the Spin Drift-Diffusion (SDD) approach. The effects of interfacial barriers and central device physics on the spin accumlation in the leads have largely been ignored in most NEGF calculations. In this work we introduce a self consistent approach that combines the NEGF and SDD methods. We calculate the effects of the barrier potential height and spin orbit interaction on the spin injection from a ferromagnet to a semiconductor through the barrier. © 2006 IEEE.
Source Title: IEEE Transactions on Magnetics
URI: http://scholarbank.nus.edu.sg/handle/10635/69060
ISSN: 00189464
DOI: 10.1109/TMAG.2010.2044979
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