Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/68951
Title: A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor
Authors: Toh, E.-H.
Wang, G.H.
Lo, G.-Q.
Balasubramanian, N.
Tung, C.-H.
Benistant, F.
Chan, L.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2005
Source: Toh, E.-H.,Wang, G.H.,Lo, G.-Q.,Balasubramanian, N.,Tung, C.-H.,Benistant, F.,Chan, L.,Samudra, G.,Yeo, Y.-C. (2005). A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 951-954. ScholarBank@NUS Repository.
Abstract: This paper reports a novel L-shaped Impact-ionization MOS (LI-MOS) transistor technology that achieves subthreshold swing well below 60 mV/decade at room temperature. First, the LI-MOS transistor is CMOS process compatible, and requires little process modification for integration in a manufacturable process. Second, the LI-MOS structure employs raised source/drain (S/D) regions that enable controllability and scalability of the impact ionization region (I-region). Third, the LI-MOS has superior compactness over previously reported I-MOS device structures. Fourth, the LI-MOS enables the integration of novel materials for band gap and strain engineering to enhance the impact ionization rate in the I-region. Based on the above technology, we demonstrate a record subthreshold swing of 4.5 mV/decade at room temperature for a 100 nm gate length device that incorporates a SiGe I-region. The smallest impact-ionization-based MOS device with a gate length of 60 nm is also demonstrated with a subthreshold swing that is well below 60 mV/decade. © 2005 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/68951
ISBN: 078039268X
ISSN: 01631918
Appears in Collections:Staff Publications

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