Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2013.6466044
Title: A dual-silicon-nanowire based nanoelectromechanical switch
Authors: Qian, Y.
Lou, L.
Pott, V.
Tsai, M.J.
Lee, C. 
Issue Date: 2013
Source: Qian, Y.,Lou, L.,Pott, V.,Tsai, M.J.,Lee, C. (2013). A dual-silicon-nanowire based nanoelectromechanical switch. Proceedings - Winter Simulation Conference : 350-352. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2013.6466044
Abstract: A dual-silicon-nanowires based nanoelectromechanical (NEMS) switch is fabricated using standard complementary metal-oxide-semiconductor (CMOS) compatible process. The switch comprises a capacitive paddle and two silicon nanowires both connect with the paddle, form a U-shape structure. The high electrostatic force generated from the large capacitive paddle and high flexible structure favor of silicon nanowires result to ultra-low pull-in voltage. The pull-in voltage is measured at 0.9V. According to the preliminary results, this switch demonstrates great potential in decreasing pull-in voltage. © 2013 IEEE.
Source Title: Proceedings - Winter Simulation Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/68788
ISBN: 9781467348416
ISSN: 08917736
DOI: 10.1109/INEC.2013.6466044
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