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|Title:||Multicolor photoluminescence from porous silicon using focused, high-energy helium ions|
|Authors:||Teo, E.J. |
|Citation:||Teo, E.J., Breese, M.B.H., Bettiol, A.A., Mangaiyarkarasi, D., Champeaux, F., Watt, F., Blackwood, D.J. (2006-01-05). Multicolor photoluminescence from porous silicon using focused, high-energy helium ions. Advanced Materials 18 (1) : 51-55. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.200501138|
|Abstract:||The ability to controllably red-shift the wavelength of the photoluminescence (PL) from patterned areas of p-type porous silicon over 150 nm in the visible spectrum, was demonstrated. This was achieved by pre-irradiating the silicon with a focused 2 MeV helium-ion-beam, resulting in lattice damage which increases the resistivity and reduces the current flowing. The gradual red-shift of the PL emission with dose is accompanied by an increase in nanocrystal size as a result of lower hole current through the damaged regions. The results show that oxidation-related mechanisms may-redshift the PL emission when thermally or chemically oxidized.|
|Source Title:||Advanced Materials|
|Appears in Collections:||Staff Publications|
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