Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.200501138
Title: Multicolor photoluminescence from porous silicon using focused, high-energy helium ions
Authors: Teo, E.J. 
Breese, M.B.H. 
Bettiol, A.A. 
Mangaiyarkarasi, D. 
Champeaux, F.
Watt, F. 
Blackwood, D.J. 
Issue Date: 5-Jan-2006
Source: Teo, E.J., Breese, M.B.H., Bettiol, A.A., Mangaiyarkarasi, D., Champeaux, F., Watt, F., Blackwood, D.J. (2006-01-05). Multicolor photoluminescence from porous silicon using focused, high-energy helium ions. Advanced Materials 18 (1) : 51-55. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.200501138
Abstract: The ability to controllably red-shift the wavelength of the photoluminescence (PL) from patterned areas of p-type porous silicon over 150 nm in the visible spectrum, was demonstrated. This was achieved by pre-irradiating the silicon with a focused 2 MeV helium-ion-beam, resulting in lattice damage which increases the resistivity and reduces the current flowing. The gradual red-shift of the PL emission with dose is accompanied by an increase in nanocrystal size as a result of lower hole current through the damaged regions. The results show that oxidation-related mechanisms may-redshift the PL emission when thermally or chemically oxidized.
Source Title: Advanced Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/68325
ISSN: 09359648
DOI: 10.1002/adma.200501138
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