Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.829043
Title: Thermally stable fully silicided Hf-silicide metal-gate electrode
Authors: Park, C.S. 
Cho, B.J. 
Kwong, D.-L.
Keywords: CMOS
Dual-metal-gate
Hf-silicide and work-function
Silicide
Issue Date: Jun-2004
Source: Park, C.S., Cho, B.J., Kwong, D.-L. (2004-06). Thermally stable fully silicided Hf-silicide metal-gate electrode. IEEE Electron Device Letters 25 (6) : 372-374. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.829043
Abstract: We demonstrate, for the first time, thermally stable fully silicided (FUSI) Hf-silicide gate electrode whose workfunction (4.2 eV) is very close to that of n+ polysilicon. No polysilicon depletion effect and excellent thermal stability with negligible change in equivalent oxide thickness and flatband voltage even after high-temperature annealing at 950°C are demonstrated. These results indicate that FUSI Hf-silicide is a promising candidate for n-MOSFET metal-gate electrode for dual-metal CMOS process.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/68066
ISSN: 07413106
DOI: 10.1109/LED.2004.829043
Appears in Collections:Staff Publications

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