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|Title:||Thermally stable fully silicided Hf-silicide metal-gate electrode|
|Authors:||Park, C.S. |
Hf-silicide and work-function
|Citation:||Park, C.S., Cho, B.J., Kwong, D.-L. (2004-06). Thermally stable fully silicided Hf-silicide metal-gate electrode. IEEE Electron Device Letters 25 (6) : 372-374. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.829043|
|Abstract:||We demonstrate, for the first time, thermally stable fully silicided (FUSI) Hf-silicide gate electrode whose workfunction (4.2 eV) is very close to that of n+ polysilicon. No polysilicon depletion effect and excellent thermal stability with negligible change in equivalent oxide thickness and flatband voltage even after high-temperature annealing at 950°C are demonstrated. These results indicate that FUSI Hf-silicide is a promising candidate for n-MOSFET metal-gate electrode for dual-metal CMOS process.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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