Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.828566
Title: Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
Authors: Ang, D.S.
Liao, H.
Ling, C.H. 
Keywords: Hot-carrier induced degradation
Stress-induced gate leakage current (SILC)
Substrate-enhanced gate injection current
Ultrathin gate oxide
Issue Date: Jun-2004
Source: Ang, D.S., Liao, H., Ling, C.H. (2004-06). Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs. IEEE Electron Device Letters 25 (6) : 417-419. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.828566
Abstract: A possible mechanism behind the predominant source-side gate oxide degradation in channel hot-electron (CHE)-stressed deep submicrometer n-MOSFETs is presented. The role of a nonlocal hot-electron injection mechanism, arising possibly from carrier-to-carrier interaction and/or impact ionization feedback, is emphasized. The latter effect is prominently revealed through a systematic stress scheme that employs a reverse substrate bias. Oxide degradation behavior is shown to be consistent with the anode electron-energy model. The more severe source-side oxide degradation may be attributed to nonlocally injected tertiary electrons possessing greater available energy on arrival at the anode (gate), as a result of a coupled heating process.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/68003
ISSN: 07413106
DOI: 10.1109/LED.2004.828566
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