Please use this identifier to cite or link to this item: https://doi.org/6/101
Title: Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs
Authors: Lek, C.M.
Cho, B.J. 
Ang, C.H.
Tan, S.S.
Loh, W.Y. 
Zhen, J.Z.
Lap, C.
Issue Date: Jun-2002
Source: Lek, C.M.,Cho, B.J.,Ang, C.H.,Tan, S.S.,Loh, W.Y.,Zhen, J.Z.,Lap, C. (2002-06). Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs. Semiconductor Science and Technology 17 (6) : L25-L28. ScholarBank@NUS Repository. https://doi.org/6/101
Abstract: The effect of high nitrogen concentration incorporation using decoupled plasma nitridation (DPN) of ultra-thin gate oxide (≈ 15-17 Å) on p-channel MOSFET performance has been investigated and compared with the conventional thermal nitridation process. Boron penetration is successfully suppressed in the ultra-thin gate dielectric prepared by the DPN process. This is confirmed by the measurements of gate leakage current, flat-band voltage shift and interface trap densities. The success in blocking boron penetration by DPN is attributed to its capability in incorporating a high level of nitrogen to near the top interface of the gate oxide. However, as a result of high level nitridation by DPN, a degradation in transconductance (Gm) is observed and interface trap density is also increased, compared to the conventional thermal nitridation process.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/67966
ISSN: 02681242
DOI: 6/101
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