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|Title:||Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs|
|Citation:||Lek, C.M., Cho, B.J., Ang, C.H., Tan, S.S., Loh, W.Y., Zhen, J.Z., Lap, C. (2002-06). Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs. Semiconductor Science and Technology 17 (6) : L25-L28. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/17/6/101|
|Abstract:||The effect of high nitrogen concentration incorporation using decoupled plasma nitridation (DPN) of ultra-thin gate oxide (≈ 15-17 Å) on p-channel MOSFET performance has been investigated and compared with the conventional thermal nitridation process. Boron penetration is successfully suppressed in the ultra-thin gate dielectric prepared by the DPN process. This is confirmed by the measurements of gate leakage current, flat-band voltage shift and interface trap densities. The success in blocking boron penetration by DPN is attributed to its capability in incorporating a high level of nitrogen to near the top interface of the gate oxide. However, as a result of high level nitridation by DPN, a degradation in transconductance (Gm) is observed and interface trap density is also increased, compared to the conventional thermal nitridation process.|
|Source Title:||Semiconductor Science and Technology|
|Appears in Collections:||Staff Publications|
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