Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.micron.2010.07.013
Title: Polarization effects in 4Pi microscopy
Authors: Sheppard, C.J.R. 
Gong, W. 
Si, K.
Keywords: 4Pi microscopy
Focusing
Polarization
Superresolution
Issue Date: Jun-2011
Source: Sheppard, C.J.R., Gong, W., Si, K. (2011-06). Polarization effects in 4Pi microscopy. Micron 42 (4) : 353-359. ScholarBank@NUS Repository. https://doi.org/10.1016/j.micron.2010.07.013
Abstract: The effects of different apodization conditions and polarization distributions on imaging in 4Pi microscopy are discussed. Performance parameters are derived that allow the different implementations to be compared. 4Pi microscopy is mainly used because of its superior axial imaging performance, but it is shown that transverse resolution is also improved in the 4Pi geometry, by as much as 25% compared with focusing by a single aplanatic lens. Compared with plane-polarized illumination in a 4Pi aplanatic system, transverse resolution in the 4Pi mode can also be increased by about 18%, using radially polarized illumination, but at the expense of axial resolution. The electric energy density at the focus for a given power input can be increased using electric dipole polarization, which is relevant for atomic physics experiments such as laser trapping and cooling. © 2010 Elsevier Ltd.
Source Title: Micron
URI: http://scholarbank.nus.edu.sg/handle/10635/67225
ISSN: 09684328
DOI: 10.1016/j.micron.2010.07.013
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

6
checked on Dec 7, 2017

WEB OF SCIENCETM
Citations

5
checked on Nov 22, 2017

Page view(s)

32
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.