Please use this identifier to cite or link to this item:
|Title:||X-ray stress evaluation in phase change GeSbTe material and TiW electrodes|
|Citation:||Li, M., Shi, L., Zhao, R., Chong, T.C., Li, Y. (2010-05). X-ray stress evaluation in phase change GeSbTe material and TiW electrodes. Japanese Journal of Applied Physics 49 (5 PART 1) : 0580031-0580032. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.49.058003|
|Abstract:||Stress generation and relaxation upon Ge2Sb2Te5 (GST) crystallization were studied by X-ray diffraction technique, which allows the stress in either GST or Ti3W7 (TiW) to be evaluated independently within TiW/GST/TiW multilayer film. The GST crystallization results in tensile stress in the GST film and additional compressive stress in the TiW film, due to volume shrinkage of the GST film. Moreover, the tensile stress in the GST film is significantly increased when it is sandwiched between TiW films. Interfacial effect is proposed to attribute the dependence of stress on the capping layer thickness. © 2010 The Japan Society of Applied Physics.|
|Source Title:||Japanese Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 17, 2018
WEB OF SCIENCETM
checked on Oct 10, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.