Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.49.058003
Title: X-ray stress evaluation in phase change GeSbTe material and TiW electrodes
Authors: Li, M.
Shi, L.
Zhao, R.
Chong, T.C.
Li, Y. 
Issue Date: May-2010
Source: Li, M., Shi, L., Zhao, R., Chong, T.C., Li, Y. (2010-05). X-ray stress evaluation in phase change GeSbTe material and TiW electrodes. Japanese Journal of Applied Physics 49 (5 PART 1) : 0580031-0580032. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.49.058003
Abstract: Stress generation and relaxation upon Ge2Sb2Te5 (GST) crystallization were studied by X-ray diffraction technique, which allows the stress in either GST or Ti3W7 (TiW) to be evaluated independently within TiW/GST/TiW multilayer film. The GST crystallization results in tensile stress in the GST film and additional compressive stress in the TiW film, due to volume shrinkage of the GST film. Moreover, the tensile stress in the GST film is significantly increased when it is sandwiched between TiW films. Interfacial effect is proposed to attribute the dependence of stress on the capping layer thickness. © 2010 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/65063
ISSN: 00214922
DOI: 10.1143/JJAP.49.058003
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