Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jlumin.2012.09.012
Title: White electroluminescence from ITO/porous silicon junctions
Authors: Xie, Z. 
Blackwood, D.J. 
Keywords: Electroluminescence
LED
Porous silicon
White light
Issue Date: Feb-2013
Source: Xie, Z., Blackwood, D.J. (2013-02). White electroluminescence from ITO/porous silicon junctions. Journal of Luminescence 134 : 67-70. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jlumin.2012.09.012
Abstract: A DC magnetron is used to sputter highly conductive ITO on the surface of porous silicon to form LEDs that not only emit the usual red-orange light in one bias direction, but stable white light when biased in the opposite direction. The direction of the bias required for white light emission depends on whether p- or n-type silicon is used. The white light is clearly visible to the naked eye and stable for >2 h of continuous operation. The likely source of the white light emission is from the intra- or inter-band transitions of hot carriers generated in an avalanche process. © 2012 Elsevier B.V. All rights reserved.
Source Title: Journal of Luminescence
URI: http://scholarbank.nus.edu.sg/handle/10635/65059
ISSN: 00222313
DOI: 10.1016/j.jlumin.2012.09.012
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