Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.physb.2007.08.201
Title: Theoretical and experimental studies on oxygen vacancy in p-type ZnO
Authors: Yu, Z.G.
Wu, P.
Gong, H. 
Keywords: Modeling
Oxygen vacancy
ZnO
Issue Date: 15-Dec-2007
Source: Yu, Z.G., Wu, P., Gong, H. (2007-12-15). Theoretical and experimental studies on oxygen vacancy in p-type ZnO. Physica B: Condensed Matter 401-402 : 417-420. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physb.2007.08.201
Abstract: Zinc oxide (ZnO) is one of the most important transparent conducting oxides (TCOs) and has attracted much attention due to its unique properties and possible applications in UV light emitting diodes and laser diodes. The realization of high quality reproducible p-type ZnO is proven difficult because of the strong self-compensation effect of intrinsic defects. In this study, we explicitly investigated one of the native defects, oxygen vacancy, by means of theoretical and experimental studies. It was predicted that oxygen vacancy is a deep donor in ZnO. We suggest that the oxygen vacancy should be suppressed in p-type ZnO. In the experimental study on P-doped ZnO, we further explore the role of oxygen partial pressure in the fabrication of p-type ZnO by using RF sputtering method. We also found that the conduction type for P-doped ZnO thin films can be controlled by adjusting the oxygen partial pressure. In this study, we demonstrated that p-type conduction can be stabilized in a narrow oxygen partial pressure window. This research may contribute to fabricating the high quality p-type ZnO. © 2007 Elsevier B.V. All rights reserved.
Source Title: Physica B: Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/65044
ISSN: 09214526
DOI: 10.1016/j.physb.2007.08.201
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