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https://doi.org/10.1109/LED.2008.2001475
DC Field | Value | |
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dc.title | The gate leakage current in graphene field-effect transistor | |
dc.contributor.author | Mao, L.-F. | |
dc.contributor.author | Li, X.-J. | |
dc.contributor.author | Wang, Z.-O. | |
dc.contributor.author | Wang, J.-Y. | |
dc.date.accessioned | 2014-06-17T08:00:26Z | |
dc.date.available | 2014-06-17T08:00:26Z | |
dc.date.issued | 2008 | |
dc.identifier.citation | Mao, L.-F., Li, X.-J., Wang, Z.-O., Wang, J.-Y. (2008). The gate leakage current in graphene field-effect transistor. IEEE Electron Device Letters 29 (9) : 1047-1049. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001475 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/65039 | |
dc.description.abstract | The unique band structure of graphene makes the gate leakage current in a graphene field-effect transistor (FET) different from that in silicon FET. Theoretical investigation in this letter demonstrates that the Fowler-Nordheim tunneling current (TC) in a graphene FET is different from that in a silicon FET. Numerical calculations show that a higher oxide electric field results in larger TC in a graphene FET than that in a silicon FET. This implies that, to ensure a workable graphene FET, a thicker gate oxide is needed to limit the gate leakage current compared to that for a silicon FET. © 2008 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.2001475 | |
dc.source | Scopus | |
dc.subject | Dielectric films | |
dc.subject | Graphene electronics | |
dc.subject | Metal-oxide-semiconductor field-effect transistors (MOSFETs) | |
dc.subject | Tunneling | |
dc.type | Article | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.description.doi | 10.1109/LED.2008.2001475 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 29 | |
dc.description.issue | 9 | |
dc.description.page | 1047-1049 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000259573400024 | |
Appears in Collections: | Staff Publications |
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