Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2008.2001475
Title: | The gate leakage current in graphene field-effect transistor |
Authors: | Mao, L.-F. Li, X.-J. Wang, Z.-O. Wang, J.-Y. |
Keywords: | Dielectric films Graphene electronics Metal-oxide-semiconductor field-effect transistors (MOSFETs) Tunneling |
Issue Date: | 2008 |
Citation: | Mao, L.-F., Li, X.-J., Wang, Z.-O., Wang, J.-Y. (2008). The gate leakage current in graphene field-effect transistor. IEEE Electron Device Letters 29 (9) : 1047-1049. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001475 |
Abstract: | The unique band structure of graphene makes the gate leakage current in a graphene field-effect transistor (FET) different from that in silicon FET. Theoretical investigation in this letter demonstrates that the Fowler-Nordheim tunneling current (TC) in a graphene FET is different from that in a silicon FET. Numerical calculations show that a higher oxide electric field results in larger TC in a graphene FET than that in a silicon FET. This implies that, to ensure a workable graphene FET, a thicker gate oxide is needed to limit the gate leakage current compared to that for a silicon FET. © 2008 IEEE. |
Source Title: | IEEE Electron Device Letters |
URI: | http://scholarbank.nus.edu.sg/handle/10635/65039 |
ISSN: | 07413106 |
DOI: | 10.1109/LED.2008.2001475 |
Appears in Collections: | Staff Publications |
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