Please use this identifier to cite or link to this item:
|Title:||The gate leakage current in graphene field-effect transistor|
Metal-oxide-semiconductor field-effect transistors (MOSFETs)
|Source:||Mao, L.-F., Li, X.-J., Wang, Z.-O., Wang, J.-Y. (2008). The gate leakage current in graphene field-effect transistor. IEEE Electron Device Letters 29 (9) : 1047-1049. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001475|
|Abstract:||The unique band structure of graphene makes the gate leakage current in a graphene field-effect transistor (FET) different from that in silicon FET. Theoretical investigation in this letter demonstrates that the Fowler-Nordheim tunneling current (TC) in a graphene FET is different from that in a silicon FET. Numerical calculations show that a higher oxide electric field results in larger TC in a graphene FET than that in a silicon FET. This implies that, to ensure a workable graphene FET, a thicker gate oxide is needed to limit the gate leakage current compared to that for a silicon FET. © 2008 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 5, 2017
WEB OF SCIENCETM
checked on Nov 16, 2017
checked on Dec 10, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.