Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2001475
Title: The gate leakage current in graphene field-effect transistor
Authors: Mao, L.-F.
Li, X.-J. 
Wang, Z.-O.
Wang, J.-Y.
Keywords: Dielectric films
Graphene electronics
Metal-oxide-semiconductor field-effect transistors (MOSFETs)
Tunneling
Issue Date: 2008
Source: Mao, L.-F., Li, X.-J., Wang, Z.-O., Wang, J.-Y. (2008). The gate leakage current in graphene field-effect transistor. IEEE Electron Device Letters 29 (9) : 1047-1049. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001475
Abstract: The unique band structure of graphene makes the gate leakage current in a graphene field-effect transistor (FET) different from that in silicon FET. Theoretical investigation in this letter demonstrates that the Fowler-Nordheim tunneling current (TC) in a graphene FET is different from that in a silicon FET. Numerical calculations show that a higher oxide electric field results in larger TC in a graphene FET than that in a silicon FET. This implies that, to ensure a workable graphene FET, a thicker gate oxide is needed to limit the gate leakage current compared to that for a silicon FET. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/65039
ISSN: 07413106
DOI: 10.1109/LED.2008.2001475
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