Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4807166
Title: Medium range order engineering in amorphous silicon thin films for solid phase crystallization
Authors: Law, F.
Widenborg, P.I. 
Luther, J. 
Hoex, B. 
Issue Date: 21-May-2013
Source: Law, F., Widenborg, P.I., Luther, J., Hoex, B. (2013-05-21). Medium range order engineering in amorphous silicon thin films for solid phase crystallization. Journal of Applied Physics 113 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4807166
Abstract: In recent years, it has been recognized that medium range ordering (MRO) in amorphous silicon (a-Si:H) plays a role in controlling its solid phase crystallization (SPC) behavior. Information on the MRO can be obtained from the width of the first X-ray diffraction (XRD) peak of a-Si:H centered around 2θ = 27.5°. The broader the full width half maximum (FWHM) of the first XRD peak, the less ordered the a-Si:H material in the medium range length scale (up to 5 nm). In this work, it was found that the FWHM of the first XRD peak changes with the pressure used during the deposition of a-Si:H. A threshold SPC behavior was observed as a function of the a-Si:H deposition pressure and a good correlation between the SPC behavior and the a-Si:H XRD peak width was found. Results in this study indicate that higher MRO in a-Si:H led to faster SPC rates and smaller grain sizes, suggesting the presence of relatively active and high density of nucleation sites. High angle annular dark field scanning transmission electron microscopy and ultraviolet reflectance indicate that films with higher MRO yielded polycrystalline silicon (poly-Si) grains which were more defective and non-columnar in morphology. Results suggest that a-Si:H material with lower MRO were preferred as a precursor for SPC, which forms a better quality poly-Si thin film material. It was proposed that ion bombardment seems to play a role in altering the a-Si:H properties. © 2013 AIP Publishing LLC.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/64943
ISSN: 00218979
DOI: 10.1063/1.4807166
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Dec 6, 2017

WEB OF SCIENCETM
Citations

1
checked on Nov 22, 2017

Page view(s)

29
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.