Please use this identifier to cite or link to this item: https://doi.org/10.1073/pnas.0807476105
Title: Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations
Authors: Kim, D.-H.
Song, J.
Won, M.C.
Kim, H.-S.
Kim, R.-H.
Liu, Z.
Huang, Y.Y.
Hwang, K.-C.
Zhang, Y.-W. 
Rogers, J.A.
Keywords: Buckling mechanics
Flexible electronics
Plastic electronics
Semiconductor nanomaterials
Stretchable electronics
Issue Date: 2-Dec-2008
Source: Kim, D.-H., Song, J., Won, M.C., Kim, H.-S., Kim, R.-H., Liu, Z., Huang, Y.Y., Hwang, K.-C., Zhang, Y.-W., Rogers, J.A. (2008-12-02). Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations. Proceedings of the National Academy of Sciences of the United States of America 105 (48) : 18675-18680. ScholarBank@NUS Repository. https://doi.org/10.1073/pnas.0807476105
Abstract: Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enablenewbiomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90° in ≈1 cm) and linear stretching to "rubber-band" levels of strain (e.g., up to ≈140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics. © 2008 by The National Academy of Sciences of the USA.
Source Title: Proceedings of the National Academy of Sciences of the United States of America
URI: http://scholarbank.nus.edu.sg/handle/10635/64939
ISSN: 00278424
DOI: 10.1073/pnas.0807476105
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