Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2357870
Title: Luminescence properties of ZnO layers grown on Si-on-insulator substrates
Authors: Kumar, B. 
Gong, H. 
Vicknesh, S.
Chua, S.J.
Tripathy, S.
Issue Date: 2006
Source: Kumar, B., Gong, H., Vicknesh, S., Chua, S.J., Tripathy, S. (2006). Luminescence properties of ZnO layers grown on Si-on-insulator substrates. Applied Physics Letters 89 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2357870
Abstract: The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E2high optical phonon mode near 438 cm-1 in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/64935
ISSN: 00036951
DOI: 10.1063/1.2357870
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