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|Title:||Luminescence properties of ZnO layers grown on Si-on-insulator substrates|
|Authors:||Kumar, B. |
|Citation:||Kumar, B., Gong, H., Vicknesh, S., Chua, S.J., Tripathy, S. (2006). Luminescence properties of ZnO layers grown on Si-on-insulator substrates. Applied Physics Letters 89 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2357870|
|Abstract:||The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E2high optical phonon mode near 438 cm-1 in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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