Please use this identifier to cite or link to this item:
|Title:||Luminescence properties of ZnO layers grown on Si-on-insulator substrates|
|Authors:||Kumar, B. |
|Citation:||Kumar, B., Gong, H., Vicknesh, S., Chua, S.J., Tripathy, S. (2006). Luminescence properties of ZnO layers grown on Si-on-insulator substrates. Applied Physics Letters 89 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2357870|
|Abstract:||The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E2high optical phonon mode near 438 cm-1 in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jun 27, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.