Please use this identifier to cite or link to this item: https://doi.org/10.1557/jmr.2011.48
Title: Low-temperature fabrication of nanocrystalline silicon thin films on mechanically flexible substrates by vacuum arc discharge
Authors: Tsai, J.T.H.
Lin, T.-Y.
Chua, D.H.C. 
Keywords: Crystalline
Si
Thin film
Issue Date: 14-May-2011
Citation: Tsai, J.T.H., Lin, T.-Y., Chua, D.H.C. (2011-05-14). Low-temperature fabrication of nanocrystalline silicon thin films on mechanically flexible substrates by vacuum arc discharge. Journal of Materials Research 26 (9) : 1076-1080. ScholarBank@NUS Repository. https://doi.org/10.1557/jmr.2011.48
Abstract: Nanocrystalline silicon thin films were fabricated using a vacuum arc discharge technique. These thin films can be deposited on plastic substrates effectively when cooled by a cryogenic substrate holder. We used single crystal silicon wafers as both the electrodes to ignite the vacuum arc and the silicon ion source to deposit thin films. This resulted in nanocrystalline silicon clusters embedded in the amorphous silicon matrix. This thin film has highly crystalline volume (≈87%), which enhanced the absorption in wide range of wavelengths. Without ion implantation, the in situ doping of p- or n-type thin films can also be achieved. This thin film deposition process has its potential for fabricating thin film transistors and photovoltaic cells on plastic substrates at fairly low production costs. Copyright © Materials Research Society 2011.
Source Title: Journal of Materials Research
URI: http://scholarbank.nus.edu.sg/handle/10635/64934
ISSN: 08842914
DOI: 10.1557/jmr.2011.48
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