Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2013.11.003
Title: Functionalization of a porous silicon impedance sensor
Authors: Liyanage, C.N.
Blackwood, D.J. 
Keywords: Impedance
Porous silicon
Surface functionalization
Issue Date: 1-Jan-2014
Source: Liyanage, C.N., Blackwood, D.J. (2014-01-01). Functionalization of a porous silicon impedance sensor. Thin Solid Films 550 : 677-682. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2013.11.003
Abstract: A sensor device is demonstrated based on changes in the impedance within a layer of porous silicon on exposure to the target analyte. Selectivity can be obtained by attaching functional organic groups onto the porous silicon. If the target molecules do not interact with the attached functional groups, then the sensor's response varies linearly with concentration. In the event however, when strong hydrogen-bonding occurs a much larger response is recorded on exposure to low concentrations than would be expected. The hydrogen-bonding either causes increased penetration of the solvent into the porous matrix or reduces the potential drop across the solvent/porous silicon interface, i.e. reduces magnitude of the space charge capacitance in the silicon nanorods. © 2013 Elsevier B.V.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/64892
ISSN: 00406090
DOI: 10.1016/j.tsf.2013.11.003
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